dmn4020lfde d atasheet number: ds35819 rev. 3 - 2 1 of 6 www.diodes.com september 2013 ? diodes incorporated dmn4020lfde advance information 40v n-channel enhanc ement mode mosfet product summary v (br)dss r ds(on) max i d max t a = +25c 40v 20m ? @ v gs = 10v 8.0a 28m ? @ v gs = 4.5v 6.7a description and applications this new generation mosfet has been designed to minimize the on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. ? general purpose interfacing switch ? power management functions features and benefits ? 0.6mm profile ? ideal for low profile applications ? pcb footprint of 4mm 2 ? low gate threshold voltage ? low on-resistance ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: u-dfn2020-6 type e ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? nipdau over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.0065 grams (approximate) ordering information (note 4) part number marking reel size (inches) quantity per reel DMN4020LFDE-7 ne 7 3,000 DMN4020LFDE-7 ne 13 10,000 notes: 1. no purposely added lead. fully eu directive 2002 /95/ec (rohs) & 2011/65/ eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. ? 3. halogen- and antimony-free "green? products are defin ed as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our websit e at http://www.diodes.com/p roducts/packages.html. marking information date code key year 2011 2012 2013 2014 2015 2016 2017 code y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d u-dfn2020-6 type e bottom view pin out ne = product type marking code ym = date code marking y = year (ex: a = 2013) m = month (ex: 9 = september) equivalent circuit d s g ne ym
dmn4020lfde d atasheet number: ds35819 rev. 3 - 2 2 of 6 www.diodes.com september 2013 ? diodes incorporated dmn4020lfde advance information maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss 40 v gate-source voltage v gss 20 v continuous drain current (note 6) v gs = 10v steady state t a = +25c t a = +70c i d 8.0 6.3 a t<10s t a = +25c t a = +70c i d 9.5 7.5 a continuous drain current (note 6) v gs = 4.5v steady state t a = +25c t a = +70c i d 6.7 5.3 a t<10s t a = +25c t a = +70c i d 8.0 6.4 a pulsed drain current (10s pulse, duty cycle = 1%) i dm 32 a maximum body diode continuous current i s 2.5 a thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5) t a = +25c p d 0.66 w t a = +70c 0.42 thermal resistance, junction to ambient (note 5) steady state r ? ja 189 c/w t<10s 132 total power dissipation (note 6) t a = +25c p d 2.03 w t a = +70c 1.31 thermal resistance, junction to ambient (note 6) steady state r ? ja 61 c/w t<10s 43 thermal resistance, junction to case (note 6) r ? electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7) drain-source breakdown voltage bv dss 40 - - v v gs = 0v, i d = 250 a zero gate voltage drain current t j = +25c i dss - - 1 ? a v ds = 40v, v gs = 0v gate-source leakage i gss - - 100 na v gs = 20v, v ds = 0v on characteristics (note 7) gate threshold voltage v gs ( th ) 1.4 - 2.4 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) - 15 20 m ? v gs = 10v, i d = 8a 20 28 v gs = 4.5v, i d = 4a diode forward voltage v sd - 0.7 1 v v gs = 0v, i s = 1a dynamic characteristics (note 8) input capacitance c iss - 1060 - pf v ds = 20v, v gs = 0v, f = 1.0mhz output capacitance c oss - 84 - pf reverse transfer capacitance c rss - 58 - pf gate resistance r g - 1.6 - ? v ds = 0v, v gs = 0v, f = 1mhz total gate charge (v gs = 4.5v) q g - 8.8 - nc v ds = 20v, i d = 8a total gate charge (v gs = 10v) q g - 19.1 - nc gate-source charge q g s - 3.0 - nc gate-drain charge q g d - 2.5 - nc turn-on delay time t d ( on ) - 5.3 - ns v ds = 20v, r l = 2.5 ? v gs = 10v, r g = 3 ? turn-on rise time t r - 7.1 - ns turn-off delay time t d ( off ) - 15.1 - ns turn-off fall time t f - 4.8 - ns reverse recovery time t r r - 10.5 - ns i f = 8a, di/dt = 100a/ s reverse recovery charge q r r - 4.15 - nc notes: 5. device mounted on fr-4 pc board, with minimum recommended pad layout, single sided. 6. device mounted on fr-4 substrate pc board, 2oz copper, wi th thermal bias to bottom layer 1inch square copper plate 7. short duration pulse test used to minimize self-heating effect 8. guaranteed by design. not subject to production testing
dmn4020lfde d atasheet number: ds35819 rev. 3 - 2 3 of 6 www.diodes.com september 2013 ? diodes incorporated dmn4020lfde advance information 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 0 0.5 1 1.5 2 2.5 3 v , drain-source voltage (v) figure 1 typical output characteristic ds i, d r ain c u r r en t (a) d v = 2.8v gs v = 3.0v gs v = 3.5v gs v = 4.5v gs v = 10v gs v = 4.0v gs 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v , gate-source voltage (v) gs figure 2 typical transfer characteristics i, d r ai n c u r r e n t (a) d v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a 0.008 0.01 0.012 0.014 0.016 0.018 0.02 0.022 0.024 02468101214161820 i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r ain-s o u r ce o n- r esistance ( ) ds(on) ? v = 4.5v gs v = 10v gs 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 2 4 6 8 10 12 14 16 18 20 v , gate-source voltage (v) gs figure 4 typical transfer characteristics r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) ? i= 4a d i= 8a d 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0 2 4 6 8 101214161820 i , drain current (a) d figure 5 typical on-resistance vs. drain current and temperature r , d r ain-s o u r ce o n- r esistance ( ) ds(on) ? t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = 4.5v gs 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) figure 6 on-resistance variation with temperature j ? r , d r ain-s o u r c e on-resistance (normalized) ds(on) v = 4.5v i= 5a gs d v=v i= 10a gs d 10
dmn4020lfde d atasheet number: ds35819 rev. 3 - 2 4 of 6 www.diodes.com september 2013 ? diodes incorporated dmn4020lfde advance information 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) figure 7 on-resistance variation with temperature j ? r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) ? v=4.5v i= 5a gs d v=v i= 8a gs d 10 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) figure 8 gate threshold variation vs. ambient temperature j ? i= 1ma d i = 250a d v , gate threshold voltage (v) gs(th) 0 2 4 6 8 10 12 14 16 18 20 0 0.3 0.6 0.9 1.2 1.5 v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current i, s o u r c e c u r r en t (a) s t = -55c a t= 25c a t= 85c a t = 125c a t = 150c a 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, pulse duration time (sec) figure 13 transient thermal resistance r(t), t r a n sie n t t h e r m al r esis t a n c e d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse r (t) = r(t) * r r = 177c/w duty cycle, d = t1/ t2 ?? ? ja ja ja
dmn4020lfde d atasheet number: ds35819 rev. 3 - 2 5 of 6 www.diodes.com september 2013 ? diodes incorporated dmn4020lfde advance information package outline dimensions suggested pad layout u-dfn2020-6 type e dim min max typ a 0.57 0.63 0.60 a1 0 0.05 0.03 a3 ? ? 0.15 b 0.25 0.35 0.30 b1 0.185 0.285 0.235 d 1.95 2.05 2.00 d2 0.85 1.05 0.95 e 1.95 2.05 2.00 e2 1.40 1.60 1.50 e ? ? 0.65 l 0.25 0.35 0.30 l1 0.82 0.92 0.87 k1 ? ? 0.305 k2 ? ? 0.225 z ? ? 0.20 all dimensions in mm dimensions value (in mm) c 0.650 x 0.400 x1 0.285 x2 1.050 y 0.500 y1 0.920 y2 1.600 y3 2.300 a1 z(4x) b1 l1 k1 k2 d d2 e e b(6x) l(2x) e2 a a3 x1 y3 x (6x) c x2 y1 y2 y (2x)
dmn4020lfde d atasheet number: ds35819 rev. 3 - 2 6 of 6 www.diodes.com september 2013 ? diodes incorporated dmn4020lfde advance information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2013, diodes incorporated www.diodes.com
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